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دیتاشیت - Zetex Semiconductors - NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

شماره قطعه ZTX449
شرح مفصل NPN SILICON PLANAR MEDIUM POWER TRANSISTOR
تولید کننده Zetex Semiconductors 
آرم Zetex Semiconductors 


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ZTX449 شرح
NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 2 – MARCH 1994
FEATURES
* 30 Volt VCEO
* 1 Amp continuous current
* Ptot= 1 Watt
ZTX449
C
B
E
ABSOLUTE MAXIMUM RATINGS.
E-Line
TO92 Compatible
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
50 V
Collector-Emitter Voltage
VCEO
30 V
Emitter-Base Voltage
VEBO
5V
Peak Pulse Current
ICM 2 A
Continuous Collector Current
IC
1A
Power Dissipation at Tamb = 25°C
Ptot
1W
Operating and Storage Temperature Range Tj:Tstg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 50
V IC=100µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 30
V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=100µA, IC=0
Collector Cut-Off
Current
ICBO
Emitter Cut-Off Current IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
0.1
10
0.1
0.5
1
1.25
µA
µA
µA
V
V
V
VCB=40V
VCB=40V, Tamb=100°C
VEB=4V, IC=0
IC=1A, IB=100mA*
IC=2A, IB=200mA*
IC=1A, IB=100mA*
Base-Emitter
Turn-on Voltage
VBE(on)
1 V IC=1A,VCE=2V*
Static Forward Current hFE
Transfer Ratio
Transition Frequency fT
70
100
80
40
150
IC=50mA, VCE=2V*
300 IC=500mA, VCE=2V*
IC=1A, VCE=2V*
IC=2A, VCE=2V*
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
15 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
3-173

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