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Zetex Semiconductors - NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR

Numéro de référence ZTX341
Description NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR
Fabricant Zetex Semiconductors 
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ZTX341 fiche technique
NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – MARCH 94
FEATURES
* High voltage
* Low current
ZTX341
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
Ptot
Tj:Tstg
E-Line
TO92 Compatible
VALUE
100
100
5
100
20
300
-55 to +175
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 100
V IC=10µA, IE=0
Collector-Emitter
Breakdown Voltage
V(BR)CEO 100
V IC=10mA, IB=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5
V IE=10µA, IC=0
Collector Cut-Off Current
Collecor-Emitter Cut-Off
Current
ICBO
ICER
Collector-Emitter
Saturation Voltage
VCE(sat)
0.5 µA VCB=80V, IE=0
0.5 µA VCE=80V, RBE=50K
10 µA VCE=80V, RBE=50K†
0.5 V
IC=2mA, IB=0.1mA
Base-Emitter
Saturation Voltage
VBE(sat)
1.0 V
IC=2mA, IB=0.1mA
Static Forward Current
Transfer Ratio
hFE
30
IC=2mA, VCE=1V
Transition Frequency
fT
80
MHz
IC=5mA, VCE=5V
f=60MHz
Output Capacitance
Cobo
10 pF VCB=6V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%
†Tamb=100°C
3-164

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