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General Semiconductor - Voltage Stabilizers

Numéro de référence ZTE2
Description Voltage Stabilizers
Fabricant General Semiconductor 
Logo General Semiconductor 





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ZTE2 fiche technique
ZTE1.5 thru ZTE2.4
Voltage Stabilizers
DO-204AH (DO-35 Glass)
max. .079 (2.0)
Cathode
Mark
max. .020 (0.52)
Dimensions are in inches and (millimeters)
Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Operating Current (see Table Characteristics)
Inverse Current
Power dissipation at Tamb = 25°C
Junction temperature
Storage temperature range
Features
• Silicon Stabilizer Diodes
• Monolithic integrated analog circuits designed for
small power stabilizer and limitation circuits,
providing low dynamic resistance and high-quality
stabilization performance as well as low noise. In
the reverse direction, these devices show the
behavior of forward-biased silicon diodes.
• The end of the ZTE device marked with the cathode
ring is to be connected: ZTE1.5 and ZTE2 to the
negative pole of the supply voltage; ZTE2.4 to the
positive pole of the supply voltage
• These diodes are also available in MiniMELF
case with the type designation LL1.5 … LL 2.4.
Mechanical Data
Case: DO-35 Glass Case
Weight: approx. 0.13g
Packaging codes/options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape, (52mm tape), 20K/box
Symbol
IF
Ptot
TJ
TS
Value
100
300(1)
150
55 to +150
Unit
mA
mW
°C
°C
Electrical and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Forward Voltage at IF = 10 mA
Temperature Coefficient of the
stabilized voltage at IZ = 5 mA
ZTE1.5, ZTE2
ZTE2.4
Thermal resistance junction to ambient air
VF
αVZ
αVZ
RθJA
26
34
Max.
1.1
0.4(1)
Unit
V
104/°C
104/°C
°C/W
Type
Operating Voltage
at IZ = 5mA(2)
VZ (V)
Dynamic resistance
at IZ = 5mA
rzj ()
ZTE1.5
1.35 ... 1.55
13(<20)
ZTE2
2.0 ... 2.3
18(<30)
ZTE2.4
2.2 ... 2.56
14(<20)
Notes: (1) Valid provided that electrodes are kept at ambient temperature at a distance of 8mm from case
(2) Tested with pulses tp = 5ms
Permissable operating current
at Tamb = 25°C(1)
IZ max. (mA)
120
120
120
7/7/00

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