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ZNBG2000X10 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Zetex Semiconductors - FET BIAS CONTROLLER

شماره قطعه ZNBG2000X10
شرح مفصل FET BIAS CONTROLLER
تولید کننده Zetex Semiconductors 
آرم Zetex Semiconductors 


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ZNBG2000X10 شرح
FET BIAS CONTROLLER
ZNBG2000
ZNBG2001
DEVICE DESCRIPTION
The ZNBG series of devices are designed to meet the
bias requirements of GaAs and HEMT FETs
commonly used in satellite receiver LNBs, PMR,
cellular telephones etc. with a minimum of external
components.
With the addition of two capacitors and a resistor the
devices provide drain voltage and current control for
2 external grounded source FETs, generating the
regulated negative rail required for FET gate biasing
whilst operating from a single supply. This negative
bias, at -3 volts, can also be used to supply other
external circuits.
The ZNBG2000/1 contains two bias stages. A single
resistor allows FET drain current to be set to the
desired level. The series also offers the choice of
drain voltage to be set for the FETs, the ZNBG2000
gives 2.2 volts drain whilst the ZNBG2001 gives 2
volts.
These devices are unconditionally stable over the full
working temperature with the FETs in place, subject
to the inclusion of the recommended gate and drain
capacitors. These ensure RF stability and minimal
injected noise.
It is possible to use less than the devices full
complement of FET bias controls, unused drain and
gate connections can be left open circuit without
affecting operation of the remaining bias circuits.
In order to protect the external FETs the circuits have
been designed to ensure that, under any conditions
including power up/down transients, the gate drive
from the bias circuits cannot exceed the range -3.5V
to 0.7V. Furthermore if the negative rail experiences a
fault condition, such as overload or short circuit, the
drain supply to the FETs will shut down avoiding
excessive current flow.
The ZNBG2000/1 are available in MSOP10 packages
for the minimum in devices size. Device operating
temperature is -40 to 80°C to suit a wide range of
environmental conditions.
FEATURES
Provides bias for GaAs and HEMT FETs
Drives up to two FETs
Dynamic FET protection
Drain current set by external resistor
Regulated negative rail generator requires only 2
external capacitors
Choice in drain voltage
Wide supply voltage range
MSOP surface mount package
APPLICATIONS
Satellite receiver LNBs
Private mobile radio (PMR)
Single in single out C Band LNB
Cellular telephones
ISSUE 1 - AUGUST 2001
1

قانون اساسیصفحه 7
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