DataSheetWiki


WS57C256F-35P fiches techniques PDF

STMicroelectronics - HIGH SPEED 32K x 8 CMOS EPROM

Numéro de référence WS57C256F-35P
Description HIGH SPEED 32K x 8 CMOS EPROM
Fabricant STMicroelectronics 
Logo STMicroelectronics 





1 Page

No Preview Available !





WS57C256F-35P fiche technique
WS57C256F
HIGH SPEED 32K x 8 CMOS EPROM
Fast Access Time
KEY FEATURES
Immune to Latch-UP
— tACC = 35 ns
— tCE = 35 ns
Low Power Consumption
— 200 µA Standby ICC
— Up to 200 mA
ESD Protection Exceeds 2000 Volts
Available in 300 Mil DIP and PLDCC
DESC SMD No. 5962-86063
GENERAL DESCRIPTION
The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced
CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns
Chip Enable Time (tCE). It was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a
low power device with a very cost effective die size. The low standby power capability of this 256 K product (200 µA
in a CMOS interface environment) is especially attractive.
This product, with its high speed capability, is particularly appropriate for use with today's fast DSP processors and
high-clock-rate Microprocessors. The WS57C256F's 35 ns speed enables these advanced processors to operate
without introducing any undesirable wait states. The WS57C256F is also ideal for use in modem applications, and is
recommended for use in these applications by the leading modem chip set manufacturer.
The WS57C256F is available in a variety of package types including the space saving 300 Mil DIP, the surface
mount PLDCC, and other windowed and non-windowed options. And its standard JEDEC EPROM pinouts provide
for automatic upgrade density paths for current 64K and 128K EPROM users.
MODE SELECTION
PINS CE/
MODE
PGM
OE
A9
A0
VPP VCC OUTPUTS
Read
Output
Disable
VIL VIL X
X VIH X
X VCC VCC DOUT
X VCC VCC High Z
Standby
Program
Program
Verify
VIH X
VIL VIH
X
X
X VIL X
X VCC VCC
X VPP2 VCC
High Z
DIN
X VPP2 VCC DOUT
Program
Inhibit
Signature3
VIH VIH X X VPP2 VCC
VIL VIL VH2 VIL VCC VCC
VIL VIL VH2 VIH VCC VCC
High Z
23 H4
EO H5
NOTES:
1. X can be VIL or VIH.
2. VIH = VPP = 12.75 ± 0.25 V.
3. A1 – A8, A10 – A14 = VIL.
4. Manufacturer Signature.
5. Device Signature.
PRODUCT SELECTION GUIDE
PARAMETER
Address Access Time (Max)
Output Enable Time (Max)
WS57C256F-35
35 ns
15 ns
PIN CONFIGURATION
TOP VIEW
Chip Carrier
CERDIP
VPP 1
A6
4
5
3
2
1
32 31 30
29
A8
A12 2
A7 3
A5 6
28
A4 7
27
A3 8
26
A2 9
25
A1 10
24
A0 11
23
NC 12
22
O0 13
21
14 15 16 17 18 19 20
A9
A11
NC
OE
A10
CE/PGM
O7
O6
A6 4
A5 5
A4 6
A3 7
A2 8
A1 9
A0 10
O0 11
O1 12
O2 13
O1 O2 NC O3 O4 O5
GND 14
28 VCC
27 A14
26 A13
25 A8
24 A9
23 A11
22 OE
21 A10
20 CE/PGM
19 O7
18 O6
17 O5
16 O4
15 O3
WS57C256F-45
45 ns
20 ns
WS57C256F-55
55 ns
25 ns
WS57C256F-70
70 ns
30 ns
Return to Main Menu
3-13

PagesPages 5
Télécharger [ WS57C256F-35P ]


Fiche technique recommandé

No Description détaillée Fabricant
WS57C256F-35 HIGH SPEED 32K x 8 CMOS EPROM STMicroelectronics
STMicroelectronics
WS57C256F-35C HIGH SPEED 32K x 8 CMOS EPROM STMicroelectronics
STMicroelectronics
WS57C256F-35D HIGH SPEED 32K x 8 CMOS EPROM STMicroelectronics
STMicroelectronics
WS57C256F-35J HIGH SPEED 32K x 8 CMOS EPROM STMicroelectronics
STMicroelectronics

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche