(PDF) WMBTA42 Datasheet - NPN EPITAXIAL SILICON TRANSISTORS

Número de pieza	WMBTA42
Descripción	NPN EPITAXIAL SILICON TRANSISTORS
Fabricantes	Wing Shing Computer Components
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No Preview Available ! NPN EPITAXIAL SILICON TRANSISTORS WMBTA42 High Voltage Transistor Die Size 0.60.6mm * Power Dissipation: 225mW * Collector Current: Max. 500mA * Bonding Pad Size Emitoe 100100mkm Base 100100mkm SOT——23 1. BASE 2. EMITTER 3. COLLECTOR GUARANTEED PROBED CHARACTERISTICS (TA=25℃) Characteristic Symbol Test Conditions Collector-emitter Breakdown Voltage VCEO IC=1.0mA Limits Units Min Typ Max 300 - - V Collector-Base Breakdown Voltage VCBO IC=100uA 300 - - V Collector Cut-off Current ICBO VCB=260V - - 100 nA Emitter Cut-off Current IEBO VEB=6V - - 100 nA DC Current Gain VCE=10V, IC=1mA hFE VCE=10V, IC=10mA VCE=10V, IC=30mA 30 40 - 40 - Base-Emitter Saturation Voltage VBEsat IC=20mA, Ib=2mA - - 0.90 V Collector-Emitter Saturation Voltage VCEsat IC=20mA, IB=2mA - - 0.35 V Transition Frequency fr VCE=20V, IC=10mA,f=10MHz 50 - - MHz Collector-Base Capacitance Ccb VCB=20V, f=1MHz - - 3.0 pF NOTES: Due to probe testing limitations, only the DC parameters are tested. Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(852)2341 9276 Fax:(852)2797 8153 E-mail: [email protected] 1 page

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PDF WMBTA42 Data sheet ( Hoja de datos )