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W49L102P-90B fiches techniques PDF

Winbond - 64K X 16 CMOS 3.3V FLASH MEMORY

Numéro de référence W49L102P-90B
Description 64K X 16 CMOS 3.3V FLASH MEMORY
Fabricant Winbond 
Logo Winbond 





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W49L102P-90B fiche technique
Preliminary W49L102
64K × 16 CMOS 3.3V FLASH MEMORY
GENERAL DESCRIPTION
The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K × 16 bits. The
device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49L102 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 3.3-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 3.3-volt operations:
3.3-volt Read
3.3-volt Erase
3.3-volt Program
Fast Program operation:
Word-by-Word programming: 50 µS (max.)
Fast Erase operation: 100 mS (typ.)
Fast Read access time: 55/70/90 nS
Endurance: 1K/10K cycles (typ.)
Twenty-year data retention
Hardware data protection
8K word Boot Block with Lockout protection
Low power consumption
Active current: 15 mA (typ.)
Standby current: 10 µA (typ.)
Automatic program and erase timing with
internal VPP generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 40-pin TSOP and 44-pin
PLCC
Publication Release Date: June 1999
- 1 - Revision A1

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