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W49F201T-45B fiches techniques PDF

Winbond - 128K X 16 CMOS FLASH MEMORY

Numéro de référence W49F201T-45B
Description 128K X 16 CMOS FLASH MEMORY
Fabricant Winbond 
Logo Winbond 





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W49F201T-45B fiche technique
Preliminary W49F201
128K × 16 CMOS FLASH MEMORY
GENERAL DESCRIPTION
The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The
device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is
not required. The unique cell architecture of the W49F201 results in fast program/erase operations
with extremely low current consumption (compared to other comparable 5-volt flash memory
products). The device can also be programmed and erased using standard EPROM programmers.
FEATURES
Single 5-volt operations:
5-volt Read/Erase/Program
Fast Program operation:
Word-by-Word programming: 50 µS (max.)
Fast Erase operation: 60 mS (typ.)
Fast Read access time: 45/55 nS
Endurance: 1K/10K cycles (typ.)
Ten-year data retention
Hardware data protection
Sector configuration
One 8K words boot block with lockout
protection
Two 8K words parameter blocks
One 104K words (208K bytes) Main Memory
Array Blocks
Low power consumption
Active current: 25 mA (typ.)
Standby current: 20 µA (typ.)
Automatic program and erase timing with
internal VPP generation
End of program or erase detection
Toggle bit
Data polling
Latched address and data
TTL compatible I/O
JEDEC standard word-wide pinouts
Available packages: 44-pin SOP, 48-pin TSOP
Publication Release Date: June 1999
- 1 - Revision A1

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