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VUE130-12NO7 fiches techniques PDF

IXYS Corporation - Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)

Numéro de référence VUE130-12NO7
Description Three Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED)
Fabricant IXYS Corporation 
Logo IXYS Corporation 





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VUE130-12NO7 fiche technique
VUE 130-12NO7
Three Phase Rectifier Bridge
with Fast Recovery Epitaxial Diodes (FRED)
in ECO-PAC 2
Preliminary data sheet
IdAV = 130 A
VRRM = 1200 V
trr = 40 ns
VRSM
V
1200
VRRM
V
1200
Typ
VUE 130-12NO7
PS16
~A 1
~L 9
~ K10
EG 1
B3Pin arangement see outlines
Symbol
IdAV
IdAVM
IFSM
I2t
TVJ
TVJM
Tstg
VISOL
Md
Weight
Conditions
TC = 70°C, module
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
50/60 Hz, RMS t = 1 min
IISOL 1 mA
t=1s
Mounting torque (M4)
typ.
Maximum Ratings
130 A
90 A
500 A
525 A
415 A
440 A
1250
1160
A2s
A2s
860 A2s
820 A2s
-40...+150
150
-40...+125
°C
°C
°C
3000
3600
V~
V~
1.5-2/14-18 Nm/lb.in.
24 g
Features
• Package with DCB ceramic
base plate in low profile
• Isolation voltage 3000 V~
• Planar passivated chips
• Low forward voltage drop
• Leads suitable for PC board soldering
Applications
• Supplies for DC power equipment
• Input and output rectifiers for high
frequency
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Space and weight savings
• Improved temperature and power
cycling capability
• Small and light weight
• Low noise switching
Symbol
Conditions
Characteristic Values
typ. max.
IR
VR = VRRM
TVJ = 25°C
VR = VRRM
TVJ = TVJM
VF
IF = 60 A
TVJ = 25°C
VT0 for power-loss calculations only
rT
RthJC
RthCH
per diode; DC current
per diode, DC current, typ.
IRM IF = 130 A, -diF/dt = 100 A/µs
VR = 100 V, TVJ = 100°C
trr IF = 1 A; -di/dt = 300 A/µs; VR = 30 V, TVJ = 25°C
a Max. allowable acceleration
dS creeping distance on surface (pin to heatsink)
dA
strike distance in air
(pin to heatsink)
Data according to IEC 60747 refer to a single diode unless otherwise stated
for resistive load at bridge output.
1 mA
2.5 mA
2.7 V
1.07 V
8.2 m
0.8 K/W
0.2 K/W
7 15 A
40
50
11.2
9.7
ns
m/s2
mm
mm
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
Dimensions in mm (1 mm = 0.0394")
1-2

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