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PerkinElmer Optoelectronics - .025 NPN Phototransistors

Numéro de référence VTT7225
Description .025 NPN Phototransistors
Fabricant PerkinElmer Optoelectronics 
Logo PerkinElmer Optoelectronics 





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VTT7225 fiche technique
.025" NPN Phototransistors
IRT Molded Lensed Lateral Package
VTT7222, 7223, 7225
PACKAGE DIMENSIONS inch (mm)
CASE 7 LATERAL
CHIP TYPE: 25T
PRODUCT DESCRIPTION
A small area high speed NPN silicon phototransistor
mounted in a 3 mm diameter, lensed, end looking, plastic
package. The package material transmits infrared and
blocks visible light. These devices are spectrally and
mechanically matched to the VTE717x series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 85°C
-40°C to 85°C
50 mW
0.71 mW/°C
25 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92).
Part Number
VTT7222
VTT7223
VTT7225
Light Current
lC
mA
Min. Max.
H
fc (mW/cm2)
VCE = 5.0 V
0.9 —
1.8 —
4.0 —
100 (5)
100 (5)
100 (5)
Dark Current
lCEO
H=0
(nA) VCE
Max. (Volts)
100 10
100 10
100 10
Collector
Breakdown
VBR(CEO)
lC = 100 µA
H=0
Volts, Min.
30
30
30
Emitter
Breakdown
VBR(ECO)
lE = 100 µA
H=0
Volts, Min.
5.0
5.0
5.0
Saturation
Voltage
VCE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/tF
lC = 1.0 mA
RL = 100
Angular
Response θ1/2
Volts, Max. µsec, Typ.
Typ.
0.25 2.0 ±36°
0.25 2.0 ±36°
0.25 4.0 ±36°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
98

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