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PerkinElmer Optoelectronics - .050 NPN Phototransistors

Numéro de référence VTT1015
Description .050 NPN Phototransistors
Fabricant PerkinElmer Optoelectronics 
Logo PerkinElmer Optoelectronics 





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VTT1015 fiche technique
.050" NPN Phototransistors
TO-46 Flat Window Package
VTT1015, 16, 17
PACKAGE DIMENSIONS inch (mm)
CASE 1 TO-46 (FLAT WINDOW)
CHIP TYPE: 50T
PRODUCT DESCRIPTION
A large area high sensitivity NPN silicon phototransistor in
a flat lensed, hermetically sealed, TO-46 package. The
hermetic package offers superior protection from hostile
environments. The base connection is brought out
allowing conventional transistor biasing. These devices
are spectrally matched to the VTE10xx series of IREDs.
ABSOLUTE MAXIMUM RATINGS
(@ 25°C unless otherwise noted)
Maximum Temperatures
Storage Temperature:
Operating Temperature:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Current:
Lead Soldering Temperature:
(1.6 mm from case, 5 sec. max.)
-40°C to 110°C
-40°C to 110°C
250 mW
3.12 mW/°C
200 mA
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also typical curves, pages 91-92)
Part Number
VTT1015
VTT1016
VTT1017
Light Current
lC
mA
Min. Max.
H
fc (mW/cm2)
VCE = 5.0 V
0.4 —
1.0 —
2.5 —
100 (5)
100 (5)
100 (5)
Dark Current
lCEO
H=0
(nA) VCE
Max. (Volts)
25 20
25 20
25 10
Collector
Breakdown
VBR(CEO)
lC = 100 µA
H=0
Volts, Min.
40
30
20
Emitter
Breakdown
VBR(ECO)
lE = 100 µA
H=0
Volts, Min.
6.0
6.0
4.0
Saturation
Voltage
VCE(SAT)
lC = 1.0 mA
H = 400 fc
Rise/Fall Time
tR/tF
lC = 1.0 mA
RL = 100
Angular
Response θ1/2
Volts, Max. µsec, Typ.
Typ.
0.40 5.0 ±35°
0.40 5.0 ±35°
0.40 8.0 ±35°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
102

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