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PDF VTP4085S Data sheet ( Hoja de datos )
| Número de pieza | VTP4085S | |
| Descripción | VTP Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTP Process Photodiodes
VTP4085, 4085S
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
Large area planar silicon mounted on a two lead
ceramic substrate and coated with a layer of
clear epoxy. Low junction capacitance permits
fast response time.
CASE 13 CERAMIC
CHIP ACTIVE AREA: .032 in2 (21 mm2)
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 75°C
-20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
SYMBOL
CHARACTERISTIC
ISC
TC ISC
ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
λrange
λp
SR
Short Circuit Current
ISC Temperature Coefficient
Short Circuit Current
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Spectral Application Range
Spectral Response - Peak
Sensitivity
TEST CONDITIONS
H = 100 fc, 2850
2850 K
100 µW/cm2, 940 nm
H = 100 fc, 2850 K
2850 K
H = 0, VR = 100 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0 V
@ Peak
VTP4085
Min. Typ. Max.
200
.20
11.4 15
.33
-2.0
100
2.0
-11
.35
400 1100
925
.55
VTP4085S
Min. Typ. Max.
200
.20
11.4 15
.33
-2.0
15 50
4.0
-11
.35
400 1100
925
.55
UNITS
µA
%/°C
µA
mV
mV/°C
nA
MΩ
%/°C
nF
nm
nm
A/W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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