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PDF VTE7172 Data sheet ( Hoja de datos )
| Número de pieza | VTE7172 | |
| Descripción | GaAlAs Infrared Emitting Diodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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GaAlAs Infrared Emitting Diodes
Molded Lateral Package — 880 nm
VTE7172, 7173
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 7 LATERAL
CHIP SIZE: .011" x .011"
These side-looking packages are designed for use in PC board mounted interrupt detectors. The package is transfer molded plastic
and contains a high efficiency, 880 nm, GaAlAs IRED die.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
-40°C to 85°C
100 mW
1.82 mW/°C
50 mA
0.91 mA/°C
2.5 A
-.8%/°C
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
5.0V
10 µA
880 nm
14 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Part Number
VTE7172
VTE7173
Output
Irradiance
Ee
mW/cm2
Min. Typ.
0.4 0.6
0.6 0.8
Condition
distance Diameter
mm mm
16.7 4.6
16.7 4.6
Radiant
Intensity
Total Power
Test
Current
Ie
mW/sr
Min.
1.1
1.7
PO IFT
mW mA
Typ. (Pulsed)
2.5 20
5.0 20
Forward Drop
VF
@ IFT
Volts
Typ. Max.
1.3 1.8
1.3 1.8
Half Power Beam
Angle
θ1/2
Typ.
±25°
±25°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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