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PDF VTD34 Data sheet ( Hoja de datos )
| Número de pieza | VTD34 | |
| Descripción | Alternate Source/ Second Source Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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Alternate Source/
Second Source Photodiodes
VTD34
(BPW34 INDUSTRY EQUIVALENT)
PACKAGE DIMENSIONS inch (mm)
CASE 22 MINI DIP
CHIP ACTIVE AREA: .012 in2 (7.45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode in a transparent molded
plastic package. Suitable for direct mounting to
P.C.B. Arrays can be formed by positioning these
devices side by side. These photodiodes are
designed to provide excellent sensitivity at low levels
of irradiance.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-20°C to 80°C
-20°C to 80°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
CJ
tR/tF
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Junction Capacitance
Rise/Fall Time @ 1 kΩ Lead
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp.-50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
1000 Lux, 2850 K
2850 K
H = 1000 Lux, 2850 K
2850 K
H = 0, VR = 10 V
@ 1 MHz, VR = 0 V
VR = 10 V, 833 nm
@ Peak
Min.
50
300
400
40
VTD34
Typ.
70
.20
365
-2.0
2
60
50
0.60
900
±50
4.8 x 10-14
5.7 x 1012
UNITS
Max.
µA
%/°C
mV
mV/°C
30 nA
pF
nsec
A/W
1100 nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
73
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