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PDF VTB5051UV Data sheet ( Hoja de datos )
| Número de pieza | VTB5051UV | |
| Descripción | VTB Process Photodiodes | |
| Fabricantes | PerkinElmer Optoelectronics | |
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VTB Process Photodiodes
VTB5051UV
PACKAGE DIMENSIONS inch (mm)
PRODUCT DESCRIPTION
CASE 14 TO-5 HERMETIC
CHIP ACTIVE AREA: .023 in2 (14.8 mm2)
Planar silicon photodiode in a dual lead TO-5
package with a UV transmitting “flat” window.
Chip is common to the case. These diodes have
very high shunt resistance and have good blue
response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature:
Operating Temperature:
-40°C to 110°C
-40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL
CHARACTERISTIC
TEST CONDITIONS
ISC
TC ISC
VOC
TC VOC
ID
RSH
TC RSH
CJ
SR
SR
λrange
λp
VBR
θ1/2
NEP
D*
Short Circuit Current
ISC Temperature Coefficient
Open Circuit Voltage
VOC Temperature Coefficient
Dark Current
Shunt Resistance
RSH Temperature Coefficient
Junction Capacitance
Sensitivity
Sensitivity
Spectral Application Range
Spectral Response - Peak
Breakdown Voltage
Angular Resp. - 50% Resp. Pt.
Noise Equivalent Power
Specific Detectivity
H = 100 fc, 2850 K
2850 K
H = 100 fc, 2850 K
2850 K
H = 0, VR = 2.0 V
H = 0, V = 10 mV
H = 0, V = 10 mV
H = 0, V = 0
365 nm
220 nm
VTB5051UV
Min. Typ. Max.
85 130
.12 .23
490
-2.0
250
.56
-8.0
3.0
0.1
.038
200 1100
920
2 40
±50
2.1 x 10-14 (Typ.)
1.8 x 10 13 (Typ.)
UNITS
µA
%/°C
mV
mV/°C
pA
GΩ
%/°C
nF
A/W
A/W
nm
nm
V
Degrees
W ⁄ Hz
cm Hz / W
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
32
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