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Numéro de référence | UPD16803GS | ||
Description | MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD16803
MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT
DESCRIPTION
The µPD16803 is a monolithic dual H bridge driver circuit which uses N-channel power MOS FETs in its driver stage.
By employing the power MOS FETs for the output stage, this driver circuit has a substantially improved saturation voltage
and power consumption as compared with conventional driver circuits that use bipolar transistors.
In addition, the drive current can be adjusted by an external resistor in a power-saving mode.
The µPD16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head
actuator of an FDD.
FEATURES
• Low ON resistance (sum of ON resistors of top and bottom transistors)
RON1 = 1.5 Ω TYP. (VM = 5.0 V)
RON2 = 2.0 Ω TYP. (VM = 12.0 V)
• Low current consumption: IDD = 0.4 mA TYP.
• Stop mode function that turns OFF all output transistors
• Compact surface mount package: 20-pin plastic SOP (300 mil)
PIN CONFIGURATION (Top View)
C1H
C2L
VM1
1A
PGND
2A
VDD
IN1
IN2
INC
1
2
3
4
5
6
7
8
9
10
20 C1L
19 C2H
18 VG
17 1B
16 PGND
15 2B
14 VM2
13 RX
12 PS
11 DGND
Document No. S11452EJ2V0DS00 (2nd edition)
Date Published July 1997 N
Printed in Japan
© 1997
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Pages | Pages 12 | ||
Télécharger | [ UPD16803GS ] |
No | Description détaillée | Fabricant |
UPD16803GS | MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT | NEC |
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