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UPC8179TB-E3 fiches techniques PDF

NEC - SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS

Numéro de référence UPC8179TB-E3
Description SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
Fabricant NEC 
Logo NEC 





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UPC8179TB-E3 fiche technique
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC8179TB
SILICON MMIC LOW CURRENT AMPLIFIER
FOR MOBILE COMMUNICATIONS
DESCRIPTION
The µPC8179TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This
IC can realize low current consumption with external chip inductor which can not be realized on internal 50
wideband matched IC. This low current amplifier operates on 3.0 V.
This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This
process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface
from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.
FEATURES
• Low current consumption
: ICC = 4.0 mA TYP. @ VCC = 3.0 V
• Supply voltage
: VCC = 2.4 to 3.3 V
• High efficiency
: PO (1 dB) = +3.0 dBm TYP. @ f = 1.0 GHz
PO (1 dB) = +1.5 dBm TYP. @ f = 1.9 GHz
PO (1 dB) = +1.0 dBm TYP. @ f = 2.4 GHz
• Power gain
: GP = 13.5 dB TYP. @ f = 1.0 GHz
GP = 15.5 dB TYP. @ f = 1.9 GHz
GP = 15.5 dB TYP. @ f = 2.4 GHz
• Excellent isolation
: ISL = 44 dB TYP. @ f = 1.0 GHz
ISL = 42 dB TYP. @ f = 1.9 GHz
ISL = 41 dB TYP. @ f = 2.4 GHz
• Operating frequency
: 0.1 to 2.4 GHz (Output port LC matching)
• High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
• Light weight
: 7 mg (Standard value)
APPLICATION
• Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14730EJ2V0DS00 (2nd edition)
Date Published August 2000 N CP(K)
Printed in Japan
©
2000

PagesPages 28
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