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Numéro de référence | UPC2711T | ||
Description | 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT | ||
Fabricant | NEC | ||
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1 Page
DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
PPC2711T
2.9 GHz WIDE BAND AMPLIFIER
SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT
FEATURES
• High power gain
: 13 dB TYP. @ f = 1 GHz
• Excellent frequency response : 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz
• Noise figure
: 5 dB
• Single supply voltage
: 5V
• Input and output matching : 50 :
• Super small package
: 6 pin mini mold
ORDERING INFORMATION
PART NUMBER
PPC2711T-E3
PACKAGE
6 pin mini mold
SUPPLYING FORM
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to perforation side of the tape.
EQUIVALENT CIRCUIT
IN
VCC
OUT
GND
PIN CONNECTIONS
(Top View)
34
2
5
1. INPUT
2. GND
3. GND
1 6 4. OUTPUT
5. GND
6. VCC
(Bottom View)
43
52
61
Document No. P12428EJ2V0DS00 (2nd edition)
(Previous No. IC-2948)
Date Published March 1997 N
Printed in Japan
Caution: Electro-static sensitive devices
© 1993
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Pages | Pages 12 | ||
Télécharger | [ UPC2711T ] |
No | Description détaillée | Fabricant |
UPC2711T | 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT | NEC |
UPC2711TB | SILICON MMIC WIDEBAND AMPLIFIER | CEL |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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