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PDF UPC1675G Data sheet ( Hoja de datos )
| Número de pieza | UPC1675G | |
| Descripción | GENERAL PURPOSE WIDE BNAD AMPLIFIER | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
BIPOLAR ANALOG INTEGRATED CIRCUIT
µPC1675G
GENERAL PURPOSE WIDE BNAD AMPLIFIER
DESCRIPTION
The µPC1675G is a silicon monolithic integrated circuit employing small package (4pins mini mold) and designed
for use as a wide bnad amplifier convers from HF band to UHF band.
FEATURES
• Excellent frequency response : 1.9 GHz TYP.
@ 3 dB down below flat gain.
• High isolation.
• Super small package.
• Uni- and low voltage operation : VCC = 5 V
• Input and output matching 50 Ω.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage
VCC
6
Total Power Dissipation
PT
200
Operating Temperature Topt −40 to +85
Storage Temperature
Tstg −55 to +150
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C, VCC = 5 V)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
Circuit Current
ICC 12 17 22
Power Gain
GP 10 12 14
Noise Figure
NF 5.5 7.0
Upper Limit Operating Frequency fu 1.6 1.9
Isolation
ISL 21 25
Input Return Loss
RLin 9 12
Output Return Loss
RLout 8 11
Maximum Output Level
PO 2 4
UNIT
TEST CONDITIONS
mA No Signal
dB f = 0.5 GHz
dB f = 0.5 GHz
GHz 3 dB down below flat gain
dB f = 0.5 GHz
dB f = 0.5 GHz
dB f = 0.5 GHz
dBm f = 0.5 GHz, Pin = 0 dBm
NEC cannot assume any responsibility for any circuits shown or represent that
they are free from patent infringement.
Document No. P12446EJ2V0DS00 (2nd edition)
(Previous No. IC-1890)
Date Published March 1997 N
Printed in Japan
© 1989
1 page  
[MEMO]
µPC1675G
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPC1675G.PDF ] | |
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