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NEC - NECs NPN SILICON RF TWIN TRANSISTOR

Numéro de référence UPA861TD
Description NECs NPN SILICON RF TWIN TRANSISTOR
Fabricant NEC 
Logo NEC 





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UPA861TD fiche technique
NEC's NPN SILICON
RF TWIN TRANSISTOR
UPA861TD
FEATURES
• LOW VOLTAGE, LOW CURRENT OPERATION
• LOW CAPACITANCE FOR WIDE TUNING RANGE
• SMALL PACKAGE OUTLINE:
1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:
Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR >3 GHz OSCILLATORS
DESCRIPTION
NEC's UPA861TD contains one NE894 and one NE687 NPN
high frequency silicon bipolar chip. The NE894 is an excellent
oscillator chip, featuring high fT and low current, low voltage
operation. The NE687 is an excellent buffer transistor, featur-
ing low noise and high gain. NEC's new ultra small TD package
is ideal for all portable wireless applications where reducing
board space is a prime consideration. Each transistor chip is
independently mounted and easily configured for oscillator/
buffer amplifier and other applications.
OUTLINE DIMENSIONS (Units in mm)
Package Outline TD
(TOP VIEW)
1.0±0.05
0.8 +0.07
-0.05
(Top View)
C1 1 Q1
6 B1
E1 2
5 E2
C2 3 Q2
4 B2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
UPA861TD
TD
SYMBOLS
ICBO
IEBO
hFE
fT
Cre
|S21E|2
NF
PARAMETERS AND CONDITIONS
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
DC Current Gain1 at VCE = 1 V, IC = 10 mA
Gain Bandwidth at VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
Insertion Power Gain at VCE = 1 V, IC =10 mA, f = 2 GHz
Noise Figure at VCE = 1 V, IC = 3 mA, f = 2 GHz
UNITS
nA
nA
GHz
pF
dB
dB
MIN
70
10.0
7.0
TYP
110
12.0
0.4
9.0
1.5
MAX
100
100
140
0.8
2.0
ICBO
Collector Cutoff Current at VCB = 5 V, IE = 0
nA
100
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0
hFE DC Current Gain1 at VCE = 1 V, IC = 5 mA
nA 100
50 75 100
fT
Cre
|S21E|2E|2
Gain Bandwidth at VCE = 1 V, IC = 20 mA, f = 2 GHz
Feedback Capacitance2 at VCB = 0.5 V, IE = 0, f = 1 MHz
Insertion Power GainIat VCE = 1 V, IC = 20 mA, f = 2 GHz
GHz
pF
dB
17.0 20.0
0.22
11.0 13.0
0.30
NF Noise Figure at VCE = 1 V, IC = 5 mA, f = 2 GHz, Zs = Zopt dB
1.4 2.5
Notes: 1. Pulsed measurement, pulse width 350 µs, duty cycle 2 %.
2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to
guard pin of capacitances meter.
California Eastern Laboratories

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