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PDF UPA835 Data sheet ( Hoja de datos )
| Número de pieza | UPA835 | |
| Descripción | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA835TC
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE
DESCRIPTION
The µPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to
UHF band.
FEATURES
• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)
BUILT-IN TRANSISTORS
3-pin ultra super minimold part No.
Q1
2SC5010
Q2
2SC5006
ORDERING INFORMATION
Part Number
Package
µPA835TC
µPA835TC-T1
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Taping products
(3 kp/reel)
Supplying Form
8 mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation
side of the tape.
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA835TC.)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P14555EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999
1 page  
1 000
Q1
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
1 000
µPA835TC
Q2
DC CURRENT GAIN vs.
COLLECTOR CURRENT
VCE = 3 V
100
10
0.1
1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
18.00 VCE = 3 V
16.00 f = 2 GHz
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
1
10
Collector Current IC (mA)
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
12.00 VCE = 3 V
11.00 f = 2 GHz
10.00
9.00
8.00
7.00
6.00
5.00
4.00
3.00
2.00
1
10
Collector Current IC (mA)
100
10
0.1
1 10
Collector Current IC (mA)
100
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
18.00 VCE = 3 V
16.00 f = 1 GHz
14.00
12.00
10.00
8.00
6.00
4.00
2.00
0.00
1
10
Collector Current IC (mA)
100
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
14.00
VCE = 3 V
f = 1 GHz
12.00
10.00
8.00
6.00
4.00
2.00
1
10
Collector Current IC (mA)
100
Data Sheet P14555EJ1V0DS00
5
5 Page 
µPA835TC
PACKAGE DIMENSIONS
FLAT-LEAD 6 PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)
1.50±0.1
1.10±0.1
(Top View)
B1 E2 B2
6 54
Q1 Q2
123
C1 E1
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
C2
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Data Sheet P14555EJ1V0DS00
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPA835.PDF ] | |
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