|
|
PDF UPA832 Data sheet ( Hoja de datos )
| Número de pieza | UPA832 | |
| Descripción | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | |
| Fabricantes | NEC | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de UPA832 (archivo pdf) en la parte inferior de esta página. Total 12 Páginas | ||
|
No Preview Available !
PRELIMINARY DATA SHEET
Silicon Transistor
µPA832TF
NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
DESCRIPTION
The µPA832TF has two different built-in transistors (Q1
and Q2) for low noise amplification in the VHF band to UHF
band.
FEATURES
• Low noise
Q1 : NF = 1.2 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
Q2 : NF = 1.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 3 mA
• High gain
Q1 : |S21e|2 = 9.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
Q2 : |S21e|2 = 8.5 dB TYP. @f = 2 GHz, VCE = 3 V, IC = 10 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC4226, 2SC4959)
ON-CHIP TRANSISTORS
3-pin small mini mold part No.
Q1
2SC4226
Q2
2SC4959
The µPA835TF features the Q1 and Q2 in inverted positions.
ORDERING INFORMATION
PART NUMBER
µPA832TF
µPA832TF-T1
QUANTITY
PACKING STYLE
Loose products
(50 pcs)
Taping products
(3 kpcs/reel)
8-mm wide embossed tape.
Pin 6 (Q1 Base), pin 5 (Q2
Emitter), and pin 4 (Q2 Base)
face perforated side of tape.
PACKAGE DRAWINGS (Unit:mm)
2.10±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
B1 E2 B2
6 54
Q1 Q2
12 3
C1 E1 C2
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Base (Q2)
5. Emitter (Q2)
6. Base (Q1)
Caution is required concerning excess input, such as from static electricity, because the high-frequency
process is used for this device.
The information in this document is subject to change without notice.
Document No. P12724EJ1V0DS00 (1st edition)
Date Published August 1997 N
Printed in Japan
© 1997
1 page  
Q1
DC Current Gain vs. Collector Current
200
VCE = 3 V
100
50
20
10
0.5
1 5 10
Collector current IC (mA)
50
Gain Bandwidth Product vs. Collector Current
20
VCE = 3 V
f = 1.0 GHZ
10
5
2
1
0.5 1
5 10
Collector current IC (mA)
50
Insertion Power Gain vs. Collector Current
15 VCE = 3 V
f = 1.0 GHZ
10
5
00.5 1
5 10
Collector current IC (mA)
50 100
µPA832TF
Q2
DC Current Gain vs. Collector Current
200
5V
VCE = 3 V
100
0
0.1 0.2
0.5 1 2 5 10 20
Collector current IC (mA)
50 100
Gain Bandwidth Product vs. Collector Current
14
f = 2 GHz
12 5 V
3V
10
8
VCE = 1 V
6
4
2
0.5 1 2
5 10 20
Collector current IC (mA)
50
Insertion Power Gain vs. Collector Current
10
f = 2 GHz
5V
8 3V
VCE = 1 V
6
4
2
0.5 2
5 10 20
Collector current IC (mA)
50
5
5 Page 
[MEMO]
µPA832TF
11
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet UPA832.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| UPA831 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE | NEC |
| UPA831TC | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE | NEC |
| UPA832 | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | NEC |
| UPA832TF | NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE | NEC |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |