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NEC - NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD

Numéro de référence UPA813T
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4570 SMALL MINI MOLD
Fabricant NEC 
Logo NEC 





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UPA813T fiche technique
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µPA813T
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC4570) SMALL MINI MOLD
µPA813T has built-in 2 transistors which were developed for UHF.
FEATURES
• High fT
fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Small Collector Capacitance
Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2 × 2SC4570)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
ORDERING INFORMATION
PART NUMBER QUANTITY
µPA813T
Loose products
(50 PCS)
µPA813T-T1 Taping products
(3 KPCS/Reel)
PACKING STYLE
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
Remark If you require an evaluation sample, please contact an NEC Sales
Representative. (Unit sample quantity is 50 pcs.)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VEBO
IC
PT
Tj
Tstg
RATING
20
12
3
30
120 in 1 element
160 in 2 elementsNote
125
–55 to +125
Note 90 mW must not be exceeded in 1 element.
UNIT
V
V
V
mA
mW
˚C
˚C
65
Q1
12
4
Q2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Base (Q2)
5. Emitter (Q1)
3. Collector (Q2) 6. Base (Q1)
The information in this document is subject to change without notice.
Document No. P11466EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1995

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