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UPA810TC fiches techniques PDF

NEC - NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

Numéro de référence UPA810TC
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
Fabricant NEC 
Logo NEC 





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UPA810TC fiche technique
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µPA810TC
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 × 2SC5006)
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
DESCRIPTION
The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band
to the UHF band.
FEATURES
• Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold
• Built-in 2 transistors (2 × 2SC5006)
ORDERING INFORMATION
Part Number
µPA810TC
Package
Flat-lead 6-pin
thin-type ultra
super minimold
Quantity
Loose products
(50 pcs)
Supplying Form
Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
perforation side of the tape.
µPA810TC-T1
Taping products
(3 kp/reel)
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:
µPA810TC. Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PTNote
Tj
Tstg
Ratings
20
12
3
100
200 in 1 element
230 in 2 elements
150
–65 to +150
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.
Unit
V
V
V
mA
mW
˚C
˚C
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability
and additional information.
Document No. P14550EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan
©
1999

PagesPages 12
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