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NEC - MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

Numéro de référence UPA808T
Description MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
Fabricant NEC 
Logo NEC 





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UPA808T fiche technique
DATA SHEET
SILICON TRANSISTOR
µPA808T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
FEATURES
• Low Noise
NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
• A Super Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC5184)
ORDERING INFORMATION
PART NUMBER
µPA808T
µPA808T-T1
QUANTITY
PACKING STYLE
Loose products
(50 PCS)
Taping products
(3 KPCS/Reel)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
RATING
UNIT
VCBO
5
V
VCEO
3
V
VEBO
2
V
IC 30 mA
PT 90 in 1 element
mW
180 in 2 elementsNote
Tj 150 °C
Tstg
–65 to +150
°C
Note 110 mW must not be exceeded in 1 element.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
PIN CONFIGURATION (Top View)
65
Q1
12
4
Q2
3
PIN CONNECTIONS
1. Collector (Q1) 4. Emitter (Q2)
2. Emitter (Q1) 5. Base (Q2)
3. Collector (Q2) 6. Base (Q1)
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. P12154EJ2V0DS00 (2nd edition)
(Previous No. ID-3642)
Date Published November 1996 N
Printed in Japan
©©
11999954

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