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PDF UPA505T Data sheet ( Hoja de datos )
| Número de pieza | UPA505T | |
| Descripción | N-CHANNEL/P-CHANNEL MOS FET 5-PIN 2 CIRCUITS | |
| Fabricantes | NEC | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µPA505T
N-CHANNEL/P-CHANNEL MOS FET (5-PIN 2 CIRCUITS)
The µPA505T is a mini-mold device provided with two
MOS FET circuits. It achieves high-density mounting and
saves mounting costs.
PACKAGE DIMENSIONS (in millimeters)
0.32
+0.1
–0.05
0.16
+0.1
–0.06
FEATURES
• Two source common MOS FET circuits in package the
same size as SC-59
• Complementary MOS FETs are provided in one package.
• Automatic mounting supported
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.8
1.1 to 1.4
PIN CONNECTION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation
Channel Temperature
Storage Temperature
SYMBOL
VDSS
VGSS
ID(DC)
ID(pulse)*
PT
Tch
Tstg
RATINGS
50/–50
±20/+–16
±100/–+100
±200/–+200
300 (TOTAL)
150
–55 to +150
* PW ≤ 10 ms, Duty Cycle ≤ 50 %
Marking: FA
UNIT
V
V
mA
mA
mW
˚C
˚C
Note The left and right values in the ratings column are correspond to N-ch and P-ch FETs, respectively.
Document No. G11241EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
1996
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
100
ID = 10 mA
Pulsed
50 measurement
10
5
1
1
5 10
50 100
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
30 VGS = 10 V
Pulsed
measurement
20
10
0
–30 0 30 60 90 120 150
Tch - Channel Temperature - ˚C
SWITCHING CHARACTERISTICS
100
td(off)
50
tf
20
10
10
tr
td(on)
VDD = 5 V
VGS = 5 V
RG = 10 Ω
20 50 100
ID - Drain Current - mA
µPA505T
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1000
VGS = 10 V
Pulsed
500 measurement
100
50
10
10
TA = 75 ˚C
25 ˚C
–25 ˚C
50 100
500 1000
ID - Drain Current - mA
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
100
Ciss
10 Coss
Crss
1
VGS = 0
0.1 f = 1 MHz
0.1
1
10
VDS - Drain to Source Voltage - V
100
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.4
0.5 0.6 0.7 0.8 0.9
VSD - Source to Drain Voltage - V
1
5
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