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PDF UPA1912 Data sheet ( Hoja de datos )
| Número de pieza | UPA1912 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1912
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1912 is a switching device which can be driven
directly by a 2.5-V power source.
The µPA1912 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)2 = 52 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
RDS(on)3 = 70 mΩ MAX. (VGS = –2.5 V, ID = –2.5 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1912TE
6-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
–12
Gate to Source Voltage
VGSS
±10
Drain Current (DC)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±4.5
±18
Total Power Dissipation
Total Power Dissipation Note2
PT1 0.2
PT2 2
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
PACKAGE DRAWING (Unit : mm)
0.32
+0.1
–0.05
0.16+–00..016
65 4
12 3
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1, 2, 5, 6 : Drain
3 : Gate
4 : Source
EQUIVALENT CIRCUIT
Drain
V Body
Gate
Diode
V
A Gate
Protection
A
Diode
Source
W Marking: TD
W
°C
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13806EJ2V0DS00 (2nd edition)
Date Published July 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999
1 page  
µ PA1912
5 SWITCHING CHARACTERISTICS
10000
1000
100
10
−0.1
td(off)
td(on)
tf
tr
VDD = −6 V
VGS(on) = −4.0 V
RG = 10 Ω
−1 −10
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
1
0.1
0.01
0.4
0.6 0.8 1.0
VF(S-D) - Source to Drain Voltage - V
1.2
DYNAMIC INPUT CHARACTERISTICS
−8
ID = −4.5 A
−6
VDD = −10 V
−6 V
−4
−2
0 2 4 6 8 10
QG - Total Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Without Board
100
Mounted on 250mm2×35µm copper pad
connected to drain electrode in
50mm×50mm×1.6mm FR-4 board
10
1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
100 1000
Data Sheet D13806EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1912.PDF ] | |
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