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PDF UPA1815 Data sheet ( Hoja de datos )
| Número de pieza | UPA1815 | |
| Descripción | P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1815
P-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1815 is a switching device which can be
driven directly by a 2.5-V power source.
The µPA1815 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
• Can be driven by a 2.5-V power source
• Low on-state resistance
RDS(on)1 = 15 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A)
RDS(on)2 = 16 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A)
RDS(on)3 = 19 mΩ MAX. (VGS = –3.3 V, ID = –3.5 A)
RDS(on)4 = 23 mΩ MAX. (VGS = –2.5 V, ID = –3.5 A)
PACKAGE DRAWING (Unit : mm)
85
1, 5, 8 : Drain
2, 3, 6, 7: Source
4 : Gate
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
–3°
0.1±0.05
0.5
0.6
+0.15
–0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1815GR-9JG
Power TSSOP8
0.65 0.8 MAX.
0.27
+0.03
–0.08
0.10 M
0.1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS –20 V
Gate to Source Voltage
5 Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
VGSS
ID(DC)
ID(pulse)
PT
±12
±7
±26
2.0
V
A
A
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13805EJ2V0DS00 (2nd edition)
Date Published August 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999
1 page  
µ PA1815
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
VGS = 0 V
Ciss
Coss
Crss
1000
100
SWITCHING CHARACTERISTICS
td(off)
tr
tf
td(on)
10
10
−1
−10
VDS - Drain to Source Voltage - V
−100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
VDD = −10 V
VGS(on) = −4.0 V
1 RG = 10 Ω
−0.1
−1
ID - Drain Current - A
−10
5 DYNAMIC INPUT CHARACTERISTICS
−10
ID = −7 A
−8
−6
1 VDD = −16 V
−10 V
−4
0.1
−2
0.01
0.4
0.6 0.8
1.0 1.2
VF(S-D) - Source to Drain Voltage - V
0
0 5 10 15 20 25 30
Qg - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Mounted on ceramic
substrate of 50 cm2 x 1.1 mm
Single Pulse
100 62.5˚C/W
10
1
0.1
0.001
0.01
0.1 1 10
PW - Pulse Width - s
100 1000
Data Sheet D13805EJ2V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1815.PDF ] | |
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