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PDF UPA1770 Data sheet ( Hoja de datos )
| Número de pieza | UPA1770 | |
| Descripción | SWITCHING DUAL P-CHANNEL POWER MOS FET INDUSTRIAL USE | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1770
SWITCHING
DUAL P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The µPA1770 is a P-channel MOS Field Effect
Transistor designed for power management
applications of portable machines.
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1770G
Power SOP8
FEATURES
• Dual chip type
• Low on-resistance
RDS(on)1 = 37 mΩ MAX. (VGS = –4.5 V, ID = –3.0 A)
RDS(on)2 = 39 mΩ MAX. (VGS = –4.0 V, ID = –3.0 A)
RDS(on)3 = 59 mΩ MAX. (VGS = –2.5 V, ID = –3.0 A)
• Low input capacitance
Ciss = 1300 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage
VDSS –20 V
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit) Note2
Total Power Dissipation (2 unit) Note2
5 Total Power Dissipation (1 unit) Note3
5 Total Power Dissipation (2 unit) Note3
VGSS
ID(DC)
ID(pulse)
PT
PT
PT
PT
! 12
! 6.0
! 24
0.40
0.75
1.7
2.0
V
A
A
W
W
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board of 1600 mm2 x 1.6 mm, Drain Pad size : 4.5 mm2 x 35 µm, TA = 25°C
5 3. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm, TA = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G14055EJ1V0DS00 (1st edition)
Date Published November 1999 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1999
1 page  
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−100 TA = 25 ˚C
Single Pulse
ID(pulse)
−10
ID(DC)
−1
Mounted on ceramic
substrate of
1200 mm2 × 2.2 mm
−0.1 1unit
0 −0.1
−1
−10
VDS - Drain to Source Voltage - V
−100
FORWARD TRANSFER CHARACTERISTICS
−100
VDS = −10 V
Pulsed
−10
−1
−0.1
TA = 150˚C
TA = 125˚C
TA = 75˚C
−0.01
−0.001
0
TA = 25˚C
TA = −25˚C
TA = −50˚C
−1 −2
VGS - Gate to Source Voltage - V
−3
µ PA1770
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
Mounted on ceramic
substrate of
2.4 1200 mm2 × 2.2 mm
2 unit
2.0
1 unit
1.6
1.2
0.8
0.4
0
0
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
−30
Pulsed
−25
VGS = −4.5 V
−20
VGS = −4.0 V
−15
VGS = −2.5 V
−10
−5
−0−0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2
VDS - Drain to Source Voltage - V
Data Sheet G14055EJ1V0DS00
5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet UPA1770.PDF ] | |
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