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NEC - SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Numéro de référence UPA1704
Description SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Fabricant NEC 
Logo NEC 





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UPA1704 fiche technique
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1704
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This µPA1704 is N-Channel MOS Field Effect Transistor
designed for power management applications and Li-ion
battery application.
FEATURES
2.5-V gate drive and low on-resistance
RDS(on)1 = 13 mMAX. (VGS = 4.0 V, ID = 5.0 A)
RDS(on)2 = 16 mMAX. (VGS = 2.5 V, ID = 5.0 A)
Low Ciss : Ciss = 2700 pF TYP.
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
ORDERING INFORMATION
PART NUMBER
PACKAGE
µPA1704G
Power SOP8
PACKAGE DRAWING (Unit : mm)
85
1,2,3 ; Source
4 ; Gate
5,6,7,8 ; Drain
14
5.37 MAX.
6.0 ±0.3
4.4
0.8
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
0.5 ±0.2
0.10
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
VDSS 30 V
VGSS ±12 V
EQUIVALENT CIRCUIT
Drain Current (DC)
ID(DC)
±10
A
Drain Current (pulse) Note1
ID(pulse)
±40
A
Total Power Dissipation (TA = 25°C) Note2
PT
2.0 W
Channel Temperature
Tch 150 °C
Gate
Drain
Body
Diode
Storage Temperature
Tstg –55 to + 150
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 1200 mm2 x 0.7 mm
°C
Gate
Protection
Diode
Source
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D12908EJ1V1DS00 (1st edition)
Date Published January 2000 NS CP(K)
Printed in Japan
©
1998, 1999

PagesPages 8
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