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Número de pieza | UPA1458 | |
Descripción | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE | |
Fabricantes | NEC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de UPA1458 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! DATA SHEET
SILICON TRANSISTOR ARRAY
µPA1458
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
DESCRIPTION
The µPA1458 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
PACKAGE DIMENSION
(in millimeters)
26.8 MAX.
4.0
FEATURES
• Surge Absorber (C - B) built in.
• Easy mount by 0.1 inch of terminal interval.
• High hFE for Darlington Transistor.
ORDERING INFORMATION
1.4 0.6 ±0.1
2.54
1.4
0.5 ±0.1
Part Number
µPA1458H
Package
10 Pin SIP
Quality Grade
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
1 2 3 4 5 6 7 8 9 10
CONNECTION DIAGRAM
3579
2468
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO 60 ±10
V
Collector to Emitter Voltage VCEO 60 ±10 V
Emitter to Base Voltage
VEBO
7
V
Surge Sustaining Energy
ECEO(sus) 25 mJ/unit
Collector Current (DC)
IC(DC)
±5 A/unit
Collector Current (pulse)
IC(pulse)* ±10 A/unit
Collector Current
ICBS(DC) 5 mA/unit
Base Current (DC)
IB(DC)
0.5 A/unit
Total Power Dissipation
PT1** 3.5
W
Total Power Dissipation
PT2*** 28
W
Junction Temperature
Tj 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
* PW ≤ 300 µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
1
(B)
(C)
R1 R2
(E)
10
PIN No.
2, 4, 6, 8: Base (B)
3, 5, 7, 9: Collector (C)
1, 10 : Emitter (E)
R1 =.. 3.0 kΩ
R2 =.. 300 Ω
Document No. IC-3523
(O. D. No. IC-6342)
Date Published September 1994 P
Printed in Japan
The information in this document is subject to change without notice.
©
1994
1 page REFERENCE
Document Name
NEC semiconductor device reliability/quality control system.
Quality grade on NEC semiconductor devices.
Semiconductor device mounting technology manual.
Semiconductor device package manual.
Guide to quality assurance for semiconductor devices.
Semiconductor selection guide.
µPA1458
Document No.
TEI-1202
IEI-1209
IEI-1207
IEI-1213
MEI-1202
MF-1134
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet UPA1458.PDF ] |
Número de pieza | Descripción | Fabricantes |
UPA1452H | NPN SILICON EPITAXIAL POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING | NEC |
UPA1453 | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE | NEC |
UPA1453H | PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE | NEC |
UPA1454 | NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE | NEC |
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