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PDF UP04315 Data sheet ( Hoja de datos )
| Número de pieza | UP04315 | |
| Descripción | Silicon NPN epitaxial planar type Silicon PNP epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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Hay una vista previa y un enlace de descarga de UP04315 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Composite Transistors
UP04315
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
(0.30)
654
0.20+–00..0025
Unit: mm
0.10±0.02
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2215 + UNR2115
123
(0.50)(0.50)
1.00±0.05
1.60±0.05
Display at No.1 lead
5˚
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Collector-base voltage
(Emitter open)
VCBO
50
Collector-emitter voltage
(Base open)
VCEO
50
Collector current
Tr2 Collector-base voltage
(Emitter open)
IC
VCBO
100
−50
Collector-emitter voltage
(Base open)
VCEO
−50
Overall
Collector current
Total power dissipation
Junction temperature
Storage temperature
IC −100
PT 125
Tj 125
Tstg −55 to +125
Unit
V
V
mA
V
V
mA
mW
°C
°C
1: Emitter (Tr1)
2: Base (Tr1)
3: Collector (Tr2)
4: Emitter (Tr2)
5: Base (Tr2)
6: Collector (Tr1)
SSMini6-F1 Package
Marking Symbol: CB
Internal Connection
65
4
Tr1
Tr2
123
■ Electrical Characteristics Ta = 25°C ± 3°C
• Tr1
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V
Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0
50 V
Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1 µA
Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0
0.5 µA
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0
0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA
160 460
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.3 mA
0.25 V
Output voltage high level
VOH VCC = 5 V, VB = 0.5 V, RL = 1 kΩ
4.9
V
Output voltage low level
VOL VCC = 5 V, VB = 2.5 V, RL = 1 kΩ
0.2 V
Input resistance
R1
−30% 10 +30% kΩ
Transition frequency
fT VCB = 10 V, IE = −2 mA, f = 200 MHz
150
MHz
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: June 2003
SJJ00268BED
1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet UP04315.PDF ] | |
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