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UNR5215 fiches techniques PDF

Panasonic Semiconductor - Silicon NPN epitaxial planar type

Numéro de référence UNR5215
Description Silicon NPN epitaxial planar type
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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UNR5215 fiche technique
Transistors with built-in Resistor
UNR521x Series (UN521x Series)
Silicon NPN epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
S-Mini type package, allowing automatic insertion through the tape
packing and magazine packing
Resistance by Part Number
UNR5210
UNR5211
UNR5212
UNR5213
Marking symbol (R1)
(UN5210) 8L
47 k
(UN5211) 8A
10 k
(UN5212) 8B
22 k
(UN5213) 8C
47 k
UNR5214 (UN5214) 8D
10 k
UNR5215 (UN5215) 8E
10 k
UNR5216 (UN5216) 8F
4.7 k
UNR5217 (UN5117) 8H
22 k
UNR5218 (UN5218) 8I
0.51 k
UNR5219 (UN5219)
UNR521D (UN521D)
UNR521E (UN521E)
UNR521F (UN521F)
UNR521K (UN521K)
UNR521L (UN521L)
8K
8M
8N
8O
8P
8Q
1 k
47 k
47 k
4.7 k
10 k
4.7 k
UNR521M (UN521M) EL
2.2 k
UNR521N (UN521N) EX
4.7 k
UNR521T (UN521T) EZ
22 k
UNR521V (UN521V) FD
2.2 k
UNR521Z (UN521Z) FF
4.7 k
(R2)
10 k
22 k
47 k
47 k
5.1 k
10 k
10 k
22 k
10 k
4.7 k
4.7 k
47 k
47 k
47 k
2.2 k
22 k
0.3+–00..01
3
Unit: mm
0.15+–00..0150
12
(0.65) (0.65)
1.3±0.1
2.0±0.2
10˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R1
B
R2
C
E
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
100
150
150
55 to +150
Unit
V
V
mA
mW
°C
°C
Publication date: January 2004
Note) The part numbers in the parenthesis show conventional part number.
SJH00024CED
1

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