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Panasonic Semiconductor - Silicon PNP Epitaxial Transistor

Numéro de référence UNR2122
Description Silicon PNP Epitaxial Transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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UNR2122 fiche technique
Transistors with built-in Resistor
UNR212x Series (UN212x Series)
Silicon PNP epitaxial planar type
For digital circuits
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
Resistance by Part Number
UNR2121
UNR2122
UNR2123
UNR2124
Marking Symbol (R1)
(UN2121) 7A
2.2 k
(UN2122) 7B
4.7 k
(UN2123) 7C
10 k
(UN2124) 7D
2.2 k
UNR212X (UN212X) 7I
0.27 k
UNR212Y (UN212Y) 7Y
3.1 k
(R2)
2.2 k
4.7 k
10 k
10 k
5 k
4.6 k
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PT
Tj
Tstg
50
50
500
200
150
55 to +150
Unit
V
V
mA
mW
°C
°C
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
12
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Internal Connection
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
R1
B
R2
C
E
Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
UNR212X
VCBO
VCEO
ICBO
IC = −10 µA, IE = 0
IC = −2 mA, IB = 0
VCB = −50 V, IE = 0
50 V
50 V
1.0 µA
0.1
Collector-emitter cutoff current (Base open) ICEO VCE = −50 V, IB = 0
UNR212X
1.0
0.5
µA
Emitter-base UNR2121
cutoff current UNR2122/212X/212Y
IEBO
VEB = −6 V, IC = 0
5 mA
2
(Collector open) UNR2123/2124
1
Forward current UNR2121
transfer ratio UNR2122/212Y
hFE VCE = −10 V, IC = −5 mA
40
50
UNR2123/2124
60
UNR212X
20
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00008CED
1

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