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Numéro de référence | UN921D | ||
Description | Silicon NPN epitaxial planer transistor | ||
Fabricant | Panasonic Semiconductor | ||
Logo | |||
Transistors with built-in Resistor
UN9211/9212/9213/9214/9215/9216/9217/9218/9219/9210/921D/
921E/921F/921K/921L/UNR921M/921N/921AJ/921BJ/921CJ
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1.6±0.15
0.4 0.8±0.1 0.4
Unit: mm
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN9211
8A
10kΩ
q UN9212
8B
22kΩ
q UN9213
8C
47kΩ
q UN9214
8D
10kΩ
q UN9215
8E
10kΩ
q UN9216
8F
4.7kΩ
q UN9217
8H
22kΩ
q UN9218
8I
0.51kΩ
q UN9219
8K
1kΩ
q UN9210
8L
47kΩ
q UN921D
8M
47kΩ
q UN921E
8N
47kΩ
q UN921F
8O
4.7kΩ
q UN921K
8P
10kΩ
q UN921L
8Q
4.7kΩ
q UNR921M EL
2.2kΩ
q UNR921N EX
4.7kΩ
q UNR921AJ 8X
100kΩ
q UNR921BJ 8Y
100kΩ
q UNR921CJ 8Z
—
(R2)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
100kΩ
—
47kΩ
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
+0.05
0.85–0.03
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
B
R2
C
E
1
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Pages | Pages 15 | ||
Télécharger | [ UN921D ] |
No | Description détaillée | Fabricant |
UN9210 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN9211 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN9212 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
UN9213 | Silicon NPN epitaxial planer transistor | Panasonic Semiconductor |
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