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Panasonic Semiconductor - Silicon NPN epitaxial planar transistor

Numéro de référence UN2213
Description Silicon NPN epitaxial planar transistor
Fabricant Panasonic Semiconductor 
Logo Panasonic Semiconductor 





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UN2213 fiche technique
Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
s Features
q Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
q Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
0.65±0.15
+0.2
2.8 –0.3
+0.25
1.5 –0.05
Unit: mm
0.65±0.15
1
3
2
s Resistance by Part Number
Marking Symbol (R1)
q UN2211
8A
10k
q UN2212
8B
22k
q UN2213
8C
47k
q UN2214
8D
10k
q UN2215
8E
10k
q UN2216
8F
4.7k
q UN2217
8H
22k
q UN2218
8I
0.51k
q UN2219
8K
1k
q UN2210
8L
47k
q UN221D
8M
47k
q UN221E
8N
47k
q UN221F
8O
4.7k
q UN221K
8P
10k
q UN221L
8Q
4.7k
q UN221M
EL
2.2k
q UN221N
EX
4.7k
q UN221T
EZ
22k
q UN221V
FD
2.2k
q UN221Z
FF
4.7k
(R2)
10k
22k
47k
47k
5.1k
10k
10k
22k
10k
4.7k
4.7k
47k
47k
47k
2.2k
22k
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
B
R2
C
E
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
IC
PT
Tj
Tstg
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1

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