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UMX18N fiches techniques PDF

ROHM Semiconductor - General purpose transistors (dual transistors)

Numéro de référence UMX18N
Description General purpose transistors (dual transistors)
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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UMX18N fiche technique
Transistors
General purpose transistors
(dual transistors)
EMX18 / UMX18N
EMX18 / UMX18N
zFeatures
1) Two 2SC5585 chips in a EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic
mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
zStructure
Epitaxial planar type
NPN silicon transistor
The following characteristics apply to both Tr1 and Tr2.
zEquivalent circuit
EMX18 / UMX18N
(3) (2) (1)
Tr1
Tr2
(4) (5) (6)
zExternal dimensions (Units : mm)
EMX18
(4)
(5)
(6)
1.2
1.6
(3)
(2)
(1)
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : X18
UMX18N
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : X18
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Collector-base voltage
VCBO
15
Collector-emitter voltage
VCEO
12
Emitter-base voltage
VEBO
6
Collector current
IC 500
Power dissipation
Pd 150 (TOTAL)
Junction temperature
Tj
Storage temperature
Tstg
1 120mW per element must not be exceeded.
150
55∼+150
Unit
V
V
V
mA
mW 1
˚C
˚C

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