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ROHM Semiconductor - NPN 100mA 50V Complex Digital Transistors

Numéro de référence UMH11N
Description NPN 100mA 50V Complex Digital Transistors
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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UMH11N fiche technique
EMH11 / UMH11N / IMH11A
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet
Parameter
VCC
IC(MAX.)
R1
R2
Tr1 and Tr2
50V
100mA
10kW
10kW
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 10kW.
2) Two DTC114E chips in one package.
3) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
4) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
5) Only the on/off conditions need to be set for
operation, making the circuit design easy.
6) Lead Free/RoHS Compliant.
lOutline
EMT6
(6)
(5)
(1) (4)
(2)
(3)
EMH11
(SC-107C)
SMT6
(4)
(5)
(6)
(3)
(2)
(1)
IMH11A
SOT-457 (SC-74)
UMT6
(6)
(5)
(4)
(1)
(2)
(3)
UMH11N
SOT-353 (SC-88)
lInner circuit
EMH11 / UMH11N
OUT
IN
GND
(6) (5)
(4)
IMH11A
OUT
IN
GND
(4) (5)
(6)
lApplication
Inverter circuit, Interface circuit, Driver circuit
(1)
GND
(2)
IN
(3)
OUT
(3)
GND
(2)
IN
(1)
OUT
lPackaging specifications
Part No.
Package
EMH11
UMH11N
IMH11A
EMT6
UMT6
SMT6
Package
size
(mm)
1616
2021
2928
Taping
code
T2R
TR
T108
Reel size
(mm)
Tape width
(mm)
Basic
ordering
unit (pcs)
180 8 8,000
180 8 3,000
180 8 3,000
Marking
H11
H11
H11
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/7
2012.06 - Rev.B

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