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Fairchild Semiconductor - 1.0 Ampere General Purpose Rectifiers

Numéro de référence S1A
Description 1.0 Ampere General Purpose Rectifiers
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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S1A fiche technique
Discrete POWER & Signal
Technologies
Features
Low profile package.
Glass passivated junction.
S1A - S1M
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
0.062 (1.575)
0.055 (1.397)
2
0.181 (4.597)
0.157 (3.988)
1
0.114 (2.896)
0.098 (2.489)
0.208 (5.283)
0.188 (4.775)
0.096 (2.438)
0.078 (1.981)
1.0 Ampere General Purpose Rectifiers
0.060 (1.524) 0.008 (0.203)
0.030 (0.762) 0.004 (0.102)
0.012 (0.305)
0.006 (0.152)
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
Tstg
TJ
Average Rectified Current
@ TA = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient **
Storage Temperature Range
Operating Junction Temperature
1.0
40
1.4
11
85
-55 to +150
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
**Device mounted on FR-4 PCB 0.013 mm.
Units
A
A
W
mW/°C
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Device
1A 1B 1D 1G
Peak Repetitive Reverse Voltage
50 100 200 400
Maximum RMS Voltage
35 70 140 280
DC Reverse Voltage (Rated VR)
50 100 200 400
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage @ 1.0 A
1.0
50
1.1
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Typical Junction Capacitance
VR = 4.0 V, f = 1.0 MHz
1.8
12
1J
600
420
600
Units
1K 1M
800 1000
560 700
800 1000
V
V
V
µA
µA
V
µS
pF
©1998 Fairchild Semiconductor Corporation
S1A-S1M, Rev. A

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