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IL400 fiches techniques PDF

Siemens Semiconductor Group - PHOTO SCR OPTOCOUPLER

Numéro de référence IL400
Description PHOTO SCR OPTOCOUPLER
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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IL400 fiche technique
IL400
PHOTO SCR OPTOCOUPLER
FEATURES
• Turn On Current (IFT), 5.0 mA Typical
• Gate Trigger Current (IGT), 20 µA
• Surge Anode Current, 1.0 Amp
• Blocking Voltage, 400 V
• Gate Trigger Voltage (VGT), 0.6 Volt
• Isolation Voltage, 5300 VACRMS
• Solid State Reliability
• Standard DIP Package
• Underwriters Lab File #E52744
DESCRIPTION
The IL400 is an optically coupled SCR with a Gallium
Arsenide infrared emitter and a silicon photo SCR
sensor. Switching can be achieved while maintaining
a high degree of isolation between triggering and load
circuits. The IL400 can be used in SCR triac and solid
state relay applications where high blocking voltages
and low input current sensitivity are required.
Maximum Ratings
Emitter
Peak Reverse Voltage ........................................ 6.0 V
Peak Forward Current
(100 µs, 1% Duty Cycle)..................................1.0 A
Continuous Forward Current .............................60 mA
Power Dissipation at 25°C .............................100 mW
Derate Linearly from 25°C..........................1.3 mW/°C
Detector
Reverse Gate Voltage .........................................6.0 V
Anode Voltage (DC or AC Peak) ........................400 V
Anode Current.................................................100 mA
Surge Anode Current (10 ms duration)...............1.0 A
Surge Gate Current (5 ms duration)................200 mA
Power Dissipation, 25°C ambient .................200 mW
Derate Linearly from 25°C........................2.11 mW/°C
Package
Isolation Voltage ....................................5300 VACRMS
Isolation Resistance
VIO=500 V, TA=25°C ............................. min. 1012
VIO=500 V, TA=100°C ........................... min. 1011
Total Package Dissipation ..............................250 mW
Derate Linearly from 25°C........................2.63 mW/°C
Operating Temperature ....................–55°C to +100°C
Storage Temperature........................–55°C to +150°C
Package Dimensions in Inches (mm)
Pin One ID.
321
Anode 1
.248 (6.30)
.256 (6.50)
Cathode 2
6 Gate
5 Anode
.039
(1.00)
min.
4°
typ.
.018 (0.45)
.022 (0.55)
4 56
.335 (8.50)
.343 (8.70)
NC 3
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
18° typ.
.010 (.25)
.014 (.35)
.300 (7.62)
.347 (8.82)
4 Cathode
.110 (2.79)
.150 (3.81)
Characteristics (TA=25°C)
Symbol Min. Typ. Max. Unit Condition
Emitter
Forward Voltage
Reverse Voltage
Reverse Current
Detector
VF
VR
IR
1.2 1.5 V IF=20 mA
5.0 V IR=10 µA
10 µA VR=5 V
Forward Blocking
Voltage
VDRM 400
Reverse Blocking
Voltage
VDRRM 400
On-state Voltage
Holding Current
Gate Trigger
Voltage
Vt
IH
VGT
0.6
Forward Leakage
Current
ID
0.2
Reverse Leakage
Current
IR
0.2
Gate Trigger Current IGT
20
Package
V
V
1.2 V
500 µA
1.0 V
2.0 µA
2.0 µA
50 µA
RGK=10 K
TA=100°C
Id=150 µA
RGK=10 K
TA=100°C
Id=150 µA
IT=100 mA
RGK=27 K
VFX=50 V
VFX=100 V
RGK=27 K
RL=10 K
RGK=27 K
VRX=400 V
IF=0, TA=25°C
RGK=27 K
VRX=400 V
IF=0, TA=25°C
VFX=100 V
RGK=27 K,
RL=10 K
Turn-0n Current
Isolation
Capacitance
IFT
0.5 5.0 10.0 mA VFX=100 V
RGK=27 K
2 pF f=1 MHz
5–116

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