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IL256A fiches techniques PDF

Siemens Semiconductor Group - AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER

Numéro de référence IL256A
Description AC INPUT PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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IL256A fiche technique
IL256A
AC INPUT PHOTOTRANSISTOR
SMALL OUTLINE
SURFACE MOUNT OPTOCOUPLER
FEATURES
• Guranteed CTR Symmetry, 2:1 Maximum
• Bidirectional AC Input
Industry Standard SOIC-8 Surface
• Mountable Package
• Standard Lead Spacing, .05"
• Available in Tape and Reel Option
(Conforms to EIA Standard RS481A)
DESCRIPTION
The IL256A is an AC input phototransistor optocou-
pler. The device consists of two infrared emitters
connected in anti-parallel and coupled to a silicon
NPN phototransistor detector.
These circuit elements are constructed with a stan-
dard SOIC-8 foot print.
The product is well suited for telecom applications
such as ring detection or off/on hook status, given
its bidirectional LED input and guaranteed current
transfer ratio (CTR) minimum of 20% at IF= 10 mA.
Maximum Ratings
Emitter
Continuous Forward Current......................... 60 mA
Power Dissipation at 25°C ........................... 90 mW
Derate Linearly from 25°C ..................... 0.8 mW/°C
Detector
Collector-Emitter Breakdown Voltage .............. 30 V
Emitter-Collector Breakdown Voltage ................ 5 V
Collector-Base Breakdown Voltage ................. 70 V
Power Dissipation ..................................... 150 mW
Derate Linearly from 25°C ..................... 2.0 mW/°C
Package
Total Package Dissipation at 25°C Ambient
(LED + Detector).................................... 240 mW
Derate Linearly from 25°C ..................... 3.1 mW/°C
Storage Temperature .................. –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Soldering Time at 260°C..............................10 sec.
Dimensions in inches (mm)
.120±.005
(3.05±.13)
.240
(6.10)
CL
Pin One ID
.192±.005
(4.88±.13)
.154±.005
(3.91±.13)
.016 (.41)
Anode/
Cathode 1
Cathode/
Anode
2
NC 3
NC 4
.015±.002
(.38±.05)
40°
8 NC
7 Base
6 Collector
5 Emitter
7°
.058±.005
(1.49±.13)
.004 (.10)
.008 (.20)
.008 (.20)
5° max.
.125±.005
(3.18±.13)
.050 (1.27)
typ.
.021 (.53)
.020±.004
(.15±.10)
2 plcs.
R.010
(.25) max.
Lead
Coplanarity
±.0015 (.04)
max.
Characteristics (TA=25°C)
Sym-
bol
Min.
Emitter
Forward Voltage
Detector
VF
Breakdown Voltage
Collector-Emitter
Emitter-Collector
Collector Base
Leakage Current,
Collector-Emitter
BVCEO 30
BVECO 5
BVCBO 70
ICEO
Package
DC Current Transfer CTR
Ratio
20
Symmetry
CTR at +10mA
CTR at –10 mA
0.5
Typ.
1.2
50
10
90
5
1.0
Max. Unit
1.5 V
V
V
V
50 nA
%
2.0
Condition
IF=± 10 mA
IC=1 mA
IE=100 µA
IC=100 µA
VCE=10 V
IF=± 10 mA,
VCE=5 V
Saturation Voltage,
Collector-Emitter
Isolation Voltage,
Input to Output
VCEsat
VIO 2500
0.4 IF=± 16 mA,
IC=2 mA
VACRMS
5–1

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