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Siemens Semiconductor Group - NPN Silicon AF Transistor (For general AF application High collector current High current gain)

Numéro de référence Q62702-C2129
Description NPN Silicon AF Transistor (For general AF application High collector current High current gain)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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Q62702-C2129 fiche technique
NPN Silicon AF Transistor
q For general AF application
q High collector current
q High current gain
q Low collector-emitter saturation voltage
q Complementary type: BCP 69 (PNP)
BCP 68
Type
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Marking
BCP 68
BCP 68-10
BCP 68-16
BCP 68-25
Ordering Code
(tape and reel)
Q62702-C2126
Q62702-C2127
Q62702-C2128
Q62702-C2129
Pin Configuration
1234
BCEC
Package1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation, TS = 124 ˚C2)
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
VCE0
VCES
VCB0
VEB0
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Values
Unit
20 V
25
25
5
1A
2
100 mA
200
1.5 W
150 ˚C
– 65 … + 150
Rth JA
Rth JS
72
17
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
01.97

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