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Numéro de référence | Q62702-C1493 | ||
Description | PNP Silicon Darlington Transistors (For general AF applications High collector current) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
PNP Silicon Darlington Transistors
q For general AF applications
q High collector current
q High current gain
q Complementary types: BCV 27, BCV 47 (NPN)
BCV 26
BCV 46
Type
BCV 26
BCV 46
Marking
FDs
FEs
Ordering Code
(tape and reel)
Q62702-C1493
Q62702-C1475
Pin Configuration
123
BEC
Package1)
SOT-23
Maximum Ratings
Parameter
Symbol Values
BCV 26
Collector-emitter voltage
VCE0
30
Collector-base voltage
VCB0
40
Emitter-base voltage
VEB0
10
Collector current
IC
Peak collector current
ICM
Base current
IB
Peak base current
IBM
Total power dissipation, TS = 74 ˚C Ptot
Junction temperature
Tj
Storage temperature range
Tstg
BCV 46
60
80
10
500
800
100
200
360
150
– 65 … + 150
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
≤ 280
≤ 210
Unit
V
mA
mW
˚C
K/W
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
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Pages | Pages 4 | ||
Télécharger | [ Q62702-C1493 ] |
No | Description détaillée | Fabricant |
Q62702-C149 | PNP SILICON TRANSISTOR | Siemens Semiconductor Group |
Q62702-C1493 | PNP Silicon Darlington Transistors (For general AF applications High collector current) | Siemens Semiconductor Group |
Q62702-C1497 | NPN Silicon AF Transistors (For AF input stages and driver applications High current gain) | Siemens Semiconductor Group |
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