|
|
Numéro de référence | Q62702-B631 | ||
Description | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
Silicon Tuning Diode
• High Q hyperabrupt dual tuning diode
• Designed for low tuning voltage operation
• For VCO's in mobile communications equipment
BBY 51
Type
BBY 51
Marking Ordering Code
S3 Q62702-B631
Pin Configuration
Package
1 = A 2 = A 3 = C1/C2 SOT-23
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Operating temperature range
Storage temperature
Symbol
VR
IF
Top
Tstg
Values
7
20
- 55 ... + 150
- 55 ... + 150
Unit
V
mA
°C
Semiconductor Group
1
Jan-09-1997
|
|||
Pages | Pages 3 | ||
Télécharger | [ Q62702-B631 ] |
No | Description détaillée | Fabricant |
Q62702-B63 | NPN SILICON EPIBASE TRANSISTORS | Siemens Semiconductor Group |
Q62702-B63 | PNP SILICON EPIBASE TRANSISTORS | Siemens Semiconductor Group |
Q62702-B631 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |