|
|
Numéro de référence | Q62702-A1270 | ||
Description | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
Silicon RF Switching Diode
Preliminary data
• Design for use in shunt configuration
• High shunt signal isolation
• Low shunt insertion loss
BAR 81W
3
4
2
1 VPS05605
Type
BAR 81W
Marking Ordering Code Pin Configuration
Package
BBs Q62702-A1270 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS = 138 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Ptot
Tj
Top
Tstg
RthJA
RthJS
Value
30
100
100
150
-55 ...+125
-55 ...+150
Unit
V
mA
mW
°C
°C
≤ 200
≤ 120
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081
|
|||
Pages | Pages 4 | ||
Télécharger | [ Q62702-A1270 ] |
No | Description détaillée | Fabricant |
Q62702-A1270 | Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) | Siemens Semiconductor Group |
Q62702-A1271 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
Q62702-A1272 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
Q62702-A1273 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) | Siemens Semiconductor Group |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |