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Siemens Semiconductor Group - Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Numéro de référence Q62702-A1270
Description Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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Q62702-A1270 fiche technique
Silicon RF Switching Diode
Preliminary data
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
BAR 81W
3
4
2
1 VPS05605
Type
BAR 81W
Marking Ordering Code Pin Configuration
Package
BBs Q62702-A1270 1 = A1 2 = C2 3 = A2 4 = C1 SOT-343
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Total power dissipation, TS = 138 °C
Junction temperature
Operating temperature range
Storage temperature
Thermal Resistance
Junction - ambient 1)
Junction - soldering point
Symbol
VR
IF
Ptot
Tj
Top
Tstg
RthJA
RthJS
Value
30
100
100
150
-55 ...+125
-55 ...+150
Unit
V
mA
mW
°C
°C
200
120
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
SSeemmicioconndduuctcotor rGGrorouupp
11
Sep-109498-1-1919-081

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