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Numéro de référence | Q62702-A1097 | ||
Description | Silicon Switching Diode Array (For high speed switching applications Common cathode) | ||
Fabricant | Siemens Semiconductor Group | ||
Logo | |||
Silicon Switching Diode Array
• For high speed switching applications
• Common cathode
• Internal (galvanic) isolated Diodes Arrays
in one package
BAV 70S
Type
BAV 70S
Marking Ordering Code
A4s Q62702-A1097
Pin Configuration
Package
1/4=A1 2/5=A2 3/6=C1/2 SOT-363
Maximum Ratings per Diode
Parameter
Symbol
Diode reverse voltage
Peak reverse voltage
Forward current
Surge forward current, t = 1 µs
Total Power dissipation
TS = 85 °C
Junction temperature
Storage temperature
VR
VRM
IF
IFS
Ptot
Tj
Tstg
Thermal Resistance
Junction ambient 1)
Junction - soldering point
RthJA
RthJS
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu
Values Unit
70 V
70
200 mA
4.5 A
mW
250
150 °C
- 65 ... + 150
≤ 530
≤ 260
K/W
Semiconductor Group
1
Nov-28-1996
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Pages | Pages 4 | ||
Télécharger | [ Q62702-A1097 ] |
No | Description détaillée | Fabricant |
Q62702-A109 | Silicon Switching Diodes (Switching applications High breakdown voltage) | Siemens Semiconductor Group |
Q62702-A109 | Silicon Switching Diode Array (For high speed switching applications Common cathode) | Siemens Semiconductor Group |
Q62702-A1097 | Silicon Switching Diode Array (For high speed switching applications Common cathode) | Siemens Semiconductor Group |
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