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Número de pieza | Q60215-Y1112 | |
Descripción | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | |
Fabricantes | Siemens Semiconductor Group | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de Q60215-Y1112 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! NPN-Silizium-Fototransistor
Silicon NPN Phototransistor
BPY 62
BPY 62
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified
Wesentliche Merkmale
Features
q Speziell geeignet für Anwendungen im
Bereich von 420 nm bis 1130 nm
q Hohe Linearität
q Hermetisch dichte Metallbauform (TO-18)
mit Basisanschluβ, geeignet bis 125 °C
q Gruppiert lieferbar
q Especially suitable for applications from
420 nm to 1130 nm
q High linearity
q Hermetically sealed metal package (TO-18)
with base connection suitable up to 125 °C
q Available in groups
Anwendungen
q Lichtschranken für Gleich- und
Wechsellichtbetrieb
q Industrieelektronik
q “Messen/Steuern/Regeln”
Applications
q Photointerrupters
q Industrial electronics
q For control and drive circuits
Typ
Type
BPY 62
BPY 62-2
BPY 62-3
BPY 62-4
BPY 62-51)
Bestellnummer
Ordering Code
Q60215-Y62
Q60215-Y1111
Q60215-Y1112
Q60215-Y1113
Q62702-P1113
1) Eine Lieferung in dieser Gruppe kann wegen Ausbeuteschwankungen nicht immer sichergestellt werden.
Wir behalten uns in diesem Fall die Lieferung einer Ersatzgruppe vor.
1) Supplies out of this group cannot always be guaranteed due to unforseeable spread of yield. In this case we
will reserve us the right of delivering a substitute group.
Semiconductor Group
238
10.95
1 page Relative spectral sensitivity
Srel = f (λ)
Photocurrent
IPCE = f (Ee), VCE = 5 V
BPY 62
Total power dissipation
Ptot = f (TA)
Output characteristics
IC = f (VCE), IB = Parameter
Output characteristics
IC = f (VCE), IB = Parameter
Dark current
ICEO = f (VCE), E = 0
Photocurrent
IPCE/IPCE25o = f (TA), VCE = 5 V
Dark current
ICEO/ICEO25o = f (TA), VCE = 25 V, E = 0
Collector-emitter capacitance
CCE = f (VCE), f = 1 MHz, E = 0
Semiconductor Group
242
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet Q60215-Y1112.PDF ] |
Número de pieza | Descripción | Fabricantes |
Q60215-Y111-S4 | Silizium-Fotoelement Silicon Photovoltaic Cell | Siemens Semiconductor Group |
Q60215-Y111-S5 | Silizium-Fotoelement Silicon Photovoltaic Cell | Siemens Semiconductor Group |
Q60215-Y1111 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
Q60215-Y1112 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor | Siemens Semiconductor Group |
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