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PC100-323-620 fiches techniques PDF

Siemens Semiconductor Group - 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules

Numéro de référence PC100-323-620
Description 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules
Fabricant Siemens Semiconductor Group 
Logo Siemens Semiconductor Group 





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PC100-323-620 fiche technique
3.3V 2M x 64/72-Bit 1 BANK SDRAM Module
3.3V 4M x 64/72-Bit 2 BANK SDRAM Module
168 pin unbuffered DIMM Modules
HYS64/72V2200GU-8/-10
HYS64/72V4220GU-8/-10
168 Pin PC100 and PC66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules
for PC main memory applications
1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation
Optimized for byte-write non-parity or ECC applications
JEDEC standard Synchronous DRAMs (SDRAM)
Fully PC board layout compatible to INTELs’ Rev. 1.0 module specification
SDRAM Performance:
fCK Clock frequency (max.)
tAC Clock access time
Programmed Latencies :
-8 -8-3 -10
100 100
66
66
8
Units
MHz
ns
Product Speed
-8 PC100
-8-3 PC100
-10 PC66
CL
2
3
2
tRCD
2
2
2
tRP
2
3
2
Single +3.3V(± 0.3V ) power supply
Programmable CAS Latency, Burst Length and Wrap Sequence
(Sequential & Interleave)
Auto Refresh (CBR) and Self Refresh
Decoupling capacitors mounted on substrate
All inputs, outputs are LVTTL compatible
Serial Presence Detect with E2PROM
Utilizes 2M x 8 SDRAMs in TSOPII-44 packages
4096 refresh cycles every 64 ms
133,35 mm x 31.75 mm x 4,00 mm card size with gold contact pads
Semiconductor Group
1
6.98

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PC100-323-620 3.3 V 16M x 64/72-Bit SDRAM Modules 3.3 V 32M x 64/72-Bit SDRAM Modules 3.3 V 64M x 64/72-Bit SDRAM Modules Siemens Semiconductor Group
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PC100-323-620 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module Siemens Semiconductor Group
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