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R1LV0408CSP-5SI fiches techniques PDF

Hitachi Semiconductor - Wide Temperature Range Version 4M SRAM (512-kword 8-bit)

Numéro de référence R1LV0408CSP-5SI
Description Wide Temperature Range Version 4M SRAM (512-kword 8-bit)
Fabricant Hitachi Semiconductor 
Logo Hitachi Semiconductor 





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R1LV0408CSP-5SI fiche technique
R1LV0408C-I Series
Wide Temperature Range Version
4M SRAM (512-kword × 8-bit)
REJ03C0098-0200Z
Rev. 2.00
May.25.2004
Description
The R1LV0408C-I is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LV0408C-I Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LV0408C-I Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II and 32-pin STSOP.
Features
Single 3 V supply: 2.7 V to 3.6 V
Access time: 55/70 ns (max)
Power dissipation:
Active: 6 mW/MHz (typ)
Standby: 1.5 µW (typ)
Completely static memory.
No clock or timing strobe required
Equal access and cycle times
Common data input and output.
Three state output
Directly TTL compatible.
All inputs and outputs
Battery backup operation.
Operating temperature: 40 to +85°C
Rev.2.00, May.25.2004, page 1 of 12

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