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PDF R1387 Data sheet ( Hoja de datos )
| Número de pieza | R1387 | |
| Descripción | PHOTOMULTlPLlER TUBE | |
| Fabricantes | Hamamatsu Corporation | |
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PHOTOMULTlPLlER TUBE
R1387
300 to 850nm Response (S–20)
38mm(1–1/2 Inch) Diameter, 10–stage, Head–On Type
The configuration and basing diagram of the R1387 are identical with 6199 Photomultiplier tubes.
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Direct Interelectrode
Capacitances
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Base
SuitabIe Socket
Weight
Description/Value
300 to 850
420
Multialkali
34
Borosilicate glass
Circular cage
10
3.0
4.0
12 pin base JEDEC No.B12 43
E678 12A(supplied)
81
Unit
nm
nm
mm dia.
pF
pF
g
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Avarage Anode Current
Ambient Temperature
Value
1250
250
0.2
-30 to +50
Unit
Vdc
Vdc
mA
°C
CHARACTERISTlCS (at 25°C)
Parameter
Cathode
Sensitivity
Luminous (2856K)
Radiant at 420nm
Red/White Ratio (R 68)
Anode
Luminous (2856K)
Sensitivity
Radiant at 420nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Time Response
Anode Pulse Rise Time
Electron Transit Time
Min.
80
10
Typ.
150
64
0.2
50
2.1 104
3.3 105
4
2.8
40
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
25
Unit
A/lm
mA/W
A/lm
A/W
nA
ns
ns
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio
K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8
21 111111
SuppIy Voltage : 1000Vdc, K : Cathode, Dy : Dynode, P : Anode
Dy9
1
Dy10
11
P
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.
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